Raman scattering from GexSi1−x/Si strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95014
Reference12 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
3. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
4. Effect of static uniaxial stress on the Raman spectrum of silicon
5. Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
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