Solid-phase epitaxial growth of Ge on H-terminated and oxidized Si(100) surfaces-Reference-Cited by-同舟云学术

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Solid-phase epitaxial growth of Ge on H-terminated and oxidized Si(100) surfaces

Published:1995-04 Issue:3 Volume:327 Page:225-232
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kido Y.,Nishimura T.,Furukawa Y.,Nakayama Y.,Yasue T.,Koshikawa T.,Goppelt-Langer P.C.,Yamamoto S.,Ma Z.Q.,Naramoto H.,Ueda T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference22 articles.

1. Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scattering

2. LEED/AES Studies of the Ge on Si(111)7× 7 Surface

3. Thin epitaxial Ge−Si(111) films: Study and control of morphology

4. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

5. Growth mechanism and clustering phenomena: The Ge-on-Si system

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen detection near surfaces and shallow interfaces with resonant nuclear reaction analysis;Surface Science Reports;2014-12

2. Below-surface behavior of hydrogen studied by nuclear reaction analysis;Current Opinion in Solid State and Materials Science;2002-04

3. Growth of Mg films on H-terminated Si (111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-09

4. Molecular arrangement of organic crystal N,N′-dimethylperylene-3,4,9, 10-bis(dicarboximide) studied with metastable de-excitation spectroscopy and atomic force microscopy;Thin Solid Films;1999-04

5. Chemisorption of Ba on deuterium-terminated Si(100) surface;Applied Surface Science;1997-06

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