Growth mechanism and clustering phenomena: The Ge-on-Si system
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.7848/fulltext
Reference15 articles.
1. Structurally induced optical transitions in Ge-Si superlattices
2. The stabilization of metastable phases by epitaxy
3. Relative stability test for continuous and sampled-data control systems using the generalised sign matrix
4. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
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