In-depth profiling of the SiO2/Si-interface electronic structure using low-energy electron energy loss spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Si‐SiO2interface characterization from angular dependence of x‐ray photoelectron spectra
2. A new application of electron energy loss spectroscopy technique for a non-destructive study of the Si-SiO2 interface
3. A Quantitative Analysis of Electron Energy Loss Spectra of keV Electrons from Thin-Film-Substrate System
4. ELS Study of Amorphous Si(Substrate)-SiO2(Film Overlayer) System with Varying Primary Electron Energy
5. X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO2System: Angular Variation
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1. Excess Si and passivating N and F atoms near the pyrolytic-gas-passivated ultrathin silicon oxide film/Si(100) interface;Journal of Applied Physics;2006-12-15
2. Inhibition of excess interface Si atom generation in 700 °C-grown pyrolytic-gas passivated ultrathin silicon oxide films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-07
3. Excess Si atoms near the pyrolytic-gas-passivated ultrathin silicon oxide/Si(100) interface;Journal of Electronic Materials;2004-07
4. Microscopic composition difference related to oxidizing humidity near the ultrathin silicon oxide–Si(100) interface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-03
5. Chemical Structures of the SiO2Si Interface;Critical Reviews in Solid State and Materials Sciences;1995-01
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