Inhibition of excess interface Si atom generation in 700 °C-grown pyrolytic-gas passivated ultrathin silicon oxide films
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.1924580
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fundamental reliability of 1.5‐nm-thick silicon oxide gate films grown at 150°C by modified reactive ion beam deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-01
2. Effects of N and F passivation on the reliability and interface structure of 700 °C grown ultrathin silicon oxide/Si(100) gate films;Journal of Applied Physics;2008-01
3. 1.5-nm-thick silicon oxide gate films grown at 150°C using modified reactive ion beam deposition with pyrolytic-gas passivation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-03
4. Excess Si and passivating N and F atoms near the pyrolytic-gas-passivated ultrathin silicon oxide film/Si(100) interface;Journal of Applied Physics;2006-12-15
5. Additional fluorine passivation to pyrolytic-N2O passivated ultrathin silicon oxide/Si(100) films;Journal of Applied Physics;2006-08
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