Additional fluorine passivation to pyrolytic-N2O passivated ultrathin silicon oxide/Si(100) films-Reference-Cited by-同舟云学术

Additional fluorine passivation to pyrolytic-N2O passivated ultrathin silicon oxide/Si(100) films

Published:2006-08 Issue:3 Volume:100 Page:034507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yamada Hiroshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2222403

Reference75 articles.

1. Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSI

2. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

3. H. Yamada, Proceedings of the Fourth International Conference on Advanced Thermal Processing of Semiconductors (RTP'96 Committee, Texas, 1996), p. 103.

4. Threshold-voltage instability in MOSFET's due to channel hot-hole emission

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer;Applied Surface Science;2020-11

2. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors;Semiconductor Science and Technology;2018-03-06

3. Fowler–Nordheim analysis of oxides on 4H-SiC substrates using noncontact metrology;Journal of Applied Physics;2009-10-15

4. Fundamental reliability of 1.5‐nm-thick silicon oxide gate films grown at 150°C by modified reactive ion beam deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-01

5. Effects of N and F passivation on the reliability and interface structure of 700 °C grown ultrathin silicon oxide/Si(100) gate films;Journal of Applied Physics;2008-01