Fowler–Nordheim analysis of oxides on 4H-SiC substrates using noncontact metrology-Reference-Cited by-同舟云学术

Fowler–Nordheim analysis of oxides on 4H-SiC substrates using noncontact metrology

Published:2009-10-15 Issue:8 Volume:106 Page:083703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Oborina Elena I.,Benjamin Helen N.,Hoff Andrew M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3245323

Reference31 articles.

1. Theory and application of non-contact methods for in-line reliability determination

2. M. Wilson, J. Lagowski, A. Savtchouk, D. Marinskiy, L. Jastrzebski, and J. D’Amico, in STP 1382 Gate Dielectric Integrity: Material, Process and Tool Qualification, edited by D. C. Gupta and G. A. Brown (American Society for Testing Materials, West Conshohocken, PA, 1999), p. 74.

3. Fast Non-Contact Dielectric Characterization for SiC MOS Processing

4. Thermal Oxidation of 4H-Silicon Using the Afterglow Method

5. Growth and Metrology of Silicon Oxides on Silicon Carbide

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2020-03-30

2. Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC;Journal of Applied Physics;2015-01-14

3. Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC;Microelectronics Reliability;2013-12

4. Noncontact interface trap determination of SiO2–4H–SiC structures;Journal of Applied Physics;2010-01

5. Afterglow Chemical Processing for Oxide Growth on Silicon Carbide;MRS Proceedings;2010