Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC
Author:
Affiliation:
1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, 305-8568 Ibaraki, Japan
2. Fuji Electric Co. Ltd., 1 Fuji-machi, Hino, 191-8502 Tokyo, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/jap/117/2/1.4905916.pdf?itemId=/content/aip/journal/jap/117/2/10.1063/1.4905916&mimeType=pdf&containerItemId=content/aip/journal/jap
Reference22 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
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3. The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides
4. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors
5. Analyses of Threshold Voltage Shift on Hole Injection in HfSiOxFilms
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