Charge transport and trapping model for scaled nitride-oxide stacked films-Reference-Cited by-同舟云学术

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Charge transport and trapping model for scaled nitride-oxide stacked films

Published:1987-10 Issue:1-4 Volume:30 Page:171-179
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Young K.K.,Hu C.,Oldham W.G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Proc. 2nd Intern. Symp. on VLSI Technology, System, and Applications;Yau,1985

2. Proc. IEEE;Varnell,1983

3. Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures

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3. Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures;Journal of Applied Physics;2001-03

4. Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices;Journal of Applied Physics;1998-02-15

5. An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's;IEEE Transactions on Electron Devices;1995-04

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