The influence of oxygen adsorption on the electronic surface states and the Fermi level pinning on the clean, polar GaAs(111) surface
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference16 articles.
1. Photoemission and band‐structure studies of the GaAs(110) surface
2. Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfaces
3. Gas adsorption on cleaved GaAs(110) surfaces studied by surface photovoltage spectroscopy
4. Effects of low oxygen exposures on the electronic surface properties of GaAs (110)
5. Composition, structure, surface states, and O2 sticking coefficient for differently prepared GaAs(1̄1̄1̄)As surfaces
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1. Optical and electrical properties of heavily Mg-doped GaN upon (NH4)2Sx treatment;Applied Physics Letters;2005-05-16
2. Fermi level pinning in irradiated silicon considered as a relaxation-like semiconductor;Physica B: Condensed Matter;2004-02
3. Semiconductors, III-VI;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
4. Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
5. Photoemission yield study of the fermi level position on the clean SnO2(110) surface exposed to oxygen;Vacuum;1997-03
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