Optical and electrical properties of heavily Mg-doped GaN upon (NH4)2Sx treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1926404
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1. Nitride Semiconductors and Devices
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5. Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers
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