Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch-Reference-Cited by-同舟云学术

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Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch

Published:1998-05 Issue:3 Volume:16 Page:977
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Rumaner Lee E.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Van der Waals epitaxial growth of few layers WSe₂ on GaP(111)_B;2D Materials;2024-06-21

2. Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy;Nanoscale;2022

3. Group III selenides: Controlling dimensionality, structure, and properties through defects and heteroepitaxial growth;Journal of Vacuum Science & Technology A;2021-03

4. Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling;Applied Materials Today;2021-03

5. Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy;Semiconductors;2020-10

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