Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe<sub>2</sub>/Se-terminated GaAs heterojunction grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

Published:2022 Issue:15 Volume:14 Page:5859-5868
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Pierucci Debora¹^ORCID,Mahmoudi Aymen¹^ORCID,Silly Mathieu²^ORCID,Bisti Federico³^ORCID,Oehler Fabrice¹^ORCID,Patriarche Gilles¹^ORCID,Bonell Frédéric⁴^ORCID,Marty Alain⁴,Vergnaud Céline⁴^ORCID,Jamet Matthieu⁴^ORCID,Boukari Hervé⁵^ORCID,Lhuillier Emmanuel⁶^ORCID,Pala Marco¹^ORCID,Ouerghi Abdelkarim¹^ORCID

Affiliation:

1. Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France

2. Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, F91192 Gif sur Yvette, France

3. Dipartimento di Scienze Fisiche e Chimiche, Università dell'Aquila, Via Vetoio 10, 67100 L'Aquila, Italy

4. Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France

5. Université Grenoble Alpes, CNRS and Grenoble INP, Institut Néel, F-38000 Grenoble, France

6. Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France

Abstract

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III–V semiconductors.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR00458E

Reference71 articles.

1. 2D materials and van der Waals heterostructures

2. Modelling of stacked 2D materials and devices

3. Recent Advances in Two-Dimensional Materials beyond Graphene