Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.15.865/fulltext
Reference24 articles.
1. Work function variations of gallium arsenide cleaved single crystals
2. Influence of volume dope on Fermi level position at gallium arsenide surfaces
3. Oxygen-Induced Franz-Keldysh Effect and Surface States on GaAs (110) Surfaces in Ellipsometry
4. On the question of surface states on cleaved GaAs(110) surfaces
5. Electronic properties of clean cleaved {110} GaAs surfaces
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