Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide-Reference-Cited by-同舟云学术

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

Published:2013-03-20 Issue:7 Volume:25 Page:1078-1091
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Adelmann Christoph¹,Cuypers Daniel¹²,Tallarida Massimo³,Rodriguez Leonard N. J.¹,De Clercq Astrid¹⁴,Friedrich Daniel³,Conard Thierry¹,Delabie Annelies¹²,Seo Jin Won⁴,Locquet Jean-Pierre⁵,De Gendt Stefan¹²,Schmeisser Dieter³,Van Elshocht Sven¹,Caymax Matty¹

Affiliation:

1. Imec, Kapeldreef 75, B-3001 Leuven, Belgium

2. Departement Chemie, Katholieke Universiteit Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium

3. Brandenburgische Technische Universität, Angewandte Physik—Sensorik, Konrad-Wachsmann-Allee 17, D-03046 Cottbus, Germany

4. Departement Metaalkunde en Toegepaste Materiaalkunde, Katholieke Universiteit Leuven, Kasteelpark Arenberg 44, B-3001 Leuven, Belgium

5. Departement Natuurkunde en Sterrenkunde, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm304070h

Reference99 articles.

1. International Technology Roadmap for Semiconductors.www.itrs.net(accessed December 6, 2012).

2. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

3. Physics and Chemistry of III-V Compound Semiconductor Interfaces

4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

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