Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide-Reference-Cited by-同舟云学术

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

Published:2013-03-20 Issue:7 Volume:25 Page:1078-1091
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Adelmann Christoph¹,Cuypers Daniel¹²,Tallarida Massimo³,Rodriguez Leonard N. J.¹,De Clercq Astrid¹⁴,Friedrich Daniel³,Conard Thierry¹,Delabie Annelies¹²,Seo Jin Won⁴,Locquet Jean-Pierre⁵,De Gendt Stefan¹²,Schmeisser Dieter³,Van Elshocht Sven¹,Caymax Matty¹

Affiliation:

1. Imec, Kapeldreef 75, B-3001 Leuven, Belgium

2. Departement Chemie, Katholieke Universiteit Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium

3. Brandenburgische Technische Universität, Angewandte Physik—Sensorik, Konrad-Wachsmann-Allee 17, D-03046 Cottbus, Germany

4. Departement Metaalkunde en Toegepaste Materiaalkunde, Katholieke Universiteit Leuven, Kasteelpark Arenberg 44, B-3001 Leuven, Belgium

5. Departement Natuurkunde en Sterrenkunde, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm304070h

Reference99 articles.

1. International Technology Roadmap for Semiconductors.www.itrs.net(accessed December 6, 2012).

2. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

3. Physics and Chemistry of III-V Compound Semiconductor Interfaces

4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification of Interface Quality and Electrical Performance of ErSmO/InP Gate-Stacks by ALD-Driven HfAlO$_{\textit{x}}$ Interlayers;IEEE Transactions on Electron Devices;2024

2. Wet Chemical Treatment and Mg Doping of p‐InP Surfaces for Ohmic Low‐Resistive Metal Contacts;Advanced Engineering Materials;2023-07-28

3. Kinetically versus thermodynamically controlled factors governing elementary pathways of GaP(111) surface oxidation;Journal of Power Sources;2023-03

4. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers;ACS Applied Electronic Materials;2023-02-09

5. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers;ACS APPL ELECTRON MA;2023