Plasma-enhanced reactively evaporated deposition of SiO2 films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference19 articles.
1. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
2. Inversion of n‐Type GaAs Surfaces Using a Silicon‐Silicon Dioxide Insulator Structure
3. Annealing Behavior of HF-Treated GaAs Capped with SiO2Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition
4. Diffusion and doping of Si into GaAs from undoped SiOx/SiN film
5. Nozzle beam deposition of SiO2 films
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