Annealing Behavior of HF-Treated GaAs Capped with SiO2Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Annealing Behavior of HF-Treated GaAs Capped with SiO2Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition

Published:1992-12-15 Issue:Part 1, No. 12A Volume:31 Page:3794-3800
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hashizume Tamotsu,Hasegawa Hideki,Tochitani Gen,Shimozuma Mitsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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