Investigation of a GaN surface structure for the mask of GaAs selective growth using MOMBE
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference19 articles.
1. Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
2. Electron-Beam-Induced Cl2Etching of GaAs
3. Etching of GaAs for patterning by irradiation with an electron beam and Cl2 molecules
4. Novel electron‐beam lithography forinsitupatterning of GaAs using an oxidized surface thin layer as a resist
5. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
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1. Molecular beam epitaxial growth of GaN using ammonia cluster ion beam as a nitrogen source;physica status solidi (c);2004-09
2. Nitridation of GaAs(001) surface: Auger electron spectroscopy and reflection high-energy electron diffraction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. High quality GaN grown by a gas-source molecular-beam epitaxy and its electrical property;Journal of Crystal Growth;1998-07
4. GaAs growth selectivity using a GaN mask by MOMBE;Applied Surface Science;1998-06
5. Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method;Journal of Applied Physics;1997-06-15
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