Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365398
Reference19 articles.
1. GaN, AlN, and InN: A review
2. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
3. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
5. Point-defect energies in the nitrides of aluminum, gallium, and indium
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