Author:
Yoshida Seikoh,Sasaki Masahiro
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. Electron-Beam-Induced Cl2Etching of GaAs
2. Etching of GaAs for patterning by irradiation with an electron beam and Cl2 molecules
3. In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask
4. New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method
5. S. Yoshida, M. Sasaki, Proc. 19th Int. Symp. on GaAs and Related Compounds, Karuizawa, 1992, Inst. Phys. Conf. Ser. 129, in: T. Ikegami, F. Hasegawa, Y. Takeda (Eds.), Inst. Phys., London-Bristol, 1993, p. 49.
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