New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
2. In-situ selective-area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask
3. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
4. Selective epitaxial growth of GaAs by low-pressure MOVPE
5. Insitupattern formation and high quality overgrowth by gas source molecular beam epitaxy
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs growth selectivity using a GaN mask by MOMBE;Applied Surface Science;1998-06
2. Surface crystal-structure of a GaN film as an in situ mask using MOMBE;Journal of Crystal Growth;1997-05
3. Selective area chemical beam epitaxy of GaAs using Ga2O3 as a mask layer;Journal of Crystal Growth;1996-11
4. The effect of EB irradiation with and without hot-jet Cl2 on an ultra-thin GaN layer for selective etching;Applied Surface Science;1996-07
5. Increasing the range of growth temperatures available for GaAs selective area growth using triisopropylgallium and arsine;Journal of Crystal Growth;1996-07
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