β-(AlxGa(1−x))2O3 epitaxial growth, doping and transport
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Elsevier
Reference73 articles.
1. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy;Ahmadi;Appl. Phys. Express,2017
2. Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy;Ahmadi;Appl. Phys. Express,2017
3. H2O vapor assisted growth of β-Ga2O3 by MOCVD;Alema;AIP Adv.,2020
4. Low 1014cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD;Alema;APL Mater.,2020
5. MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping;Anhar Uddin Bhuiyan;Appl. Phys. Lett.,2019
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. State of the art, trends, and opportunities for oxide epitaxy;APL Materials;2024-04-01
2. Theoretical study on optoelectronic properties of layered In2O3 and Ga2O3;Physica Scripta;2024-03-15
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