MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
NSF
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5123495
Reference34 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Brillouin zone and band structure of β-Ga2O3
3. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
4. Czochralski grown Ga2O3 crystals
5. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
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