Low 1014 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
Author:
Affiliation:
1. Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, USA
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
ONR/Agnitron Technology subcontract
Air Force Office of Scientific Research
Defense Threat Reduction Agency
Office of Naval Research
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5132752
Reference60 articles.
1. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
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3. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
4. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
5. Large-size β-Ga2O3 single crystals and wafers
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