β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference42 articles.
1. Proper electrostatic modulation of electric field in a reliable nano-SOI with a developed channel;Anvarifard;IEEE Trans. Electron Devices,2018
2. An improved model of self-heating effects for ultrathin body SOI nMOSFETs based on phonon scattering analysis;Zhang;IEEE Electron Device Lett.,2015
3. Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment;Kim;J. Mater. Chem. C,2019
4. Investigation of short channel effects in SOI MOSFET with 20 nm channel length by a β-Ga2O3 layer;Madadi;ECS J. Solid State Sci. Technol.,2020
5. Improvement of nanoscale SOI MOSFET heating effects by vertical Gaussian drain-source doping region;Madadi;Silicon,2020
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1. Performance improvement of junctionless SOI-MOSFETs by a superior depletion technique;Physica Scripta;2023-10-13
2. Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering;Micro;2023-09-30
3. Investigation of heavy ion radiation and temperature on junctionless tunnel field effect transistor;Journal of Nanoparticle Research;2023-06-29
4. Complete depletion area in SOI junctionless FETs by multiple buried P-type pockets;The European Physical Journal Plus;2023-06-14
5. Pyramid P+ area in SOI junction-less MOSFET for logic applications: DC investigation;Applied Nanoscience;2023-03-02
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