β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference42 articles.
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1. Performance improvement of junctionless SOI-MOSFETs by a superior depletion technique;Physica Scripta;2023-10-13
2. Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering;Micro;2023-09-30
3. Investigation of heavy ion radiation and temperature on junctionless tunnel field effect transistor;Journal of Nanoparticle Research;2023-06-29
4. Complete depletion area in SOI junctionless FETs by multiple buried P-type pockets;The European Physical Journal Plus;2023-06-14
5. Pyramid P+ area in SOI junction-less MOSFET for logic applications: DC investigation;Applied Nanoscience;2023-03-02
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