Quantum chemical study of parasitic reaction in III–V nitride semiconductor crystal growth-Reference-Cited by-同舟云学术

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Quantum chemical study of parasitic reaction in III–V nitride semiconductor crystal growth

Published:2000-10 Issue:1-2 Volume:611 Page:514-524
ISSN:0022-328X
Container-title:Journal of Organometallic Chemistry
language:en
Short-container-title:Journal of Organometallic Chemistry

Author:

Nakamura Koichi,Makino Osamu,Tachibana Akitomo,Matsumoto Koh

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Biochemistry

Reference34 articles.

1. Recent Developments in InGaN-Based Blue Leds and Lds

2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

3. III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

4. High temperature adduct formation of trimethylgallium and ammonia

5. A study of parasitic reactions between NH3 and TMGa or TMAI

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1. Numerical study on gas reaction path of InN-MOVPE with three typical reactors;Journal of Crystal Growth;2024-09

2. Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor;Journal of Crystal Growth;2024-07

3. A CFD study of the gas reaction path in growth of InN films in metal–organic chemical vapor deposition;Journal of Crystal Growth;2024-01

4. Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis;Applied Physics Letters;2023-08-14

5. Gas-Phase reaction mechanism of InN MOVPE: A systematic DFT study;Journal of Crystal Growth;2023-06

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