Gas and surface processes leading to hydrogenated amorphous silicon films-Reference-Cited by-同舟云学术

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Gas and surface processes leading to hydrogenated amorphous silicon films

Published:1987-06 Issue:1-4 Volume:21 Page:147-152
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Gallacher A.,Scott J.

Publisher

Elsevier BV

Subject

General Engineering

Reference2 articles.

1. Radical species in argon‐silane discharges

2. Mono‐ and disilicon radicals in silane and silane‐argon dc discharges

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance;Thin Solid Films;2007-07

2. Growth mechanism of sputtered amorphous silicon thin films;Physica B: Condensed Matter;2006-03

3. Scanning tunneling microscopy of hydrogenated amorphous silicon: high-resolution topography and local apparent barrier heights;Applied Surface Science;1999-09

4. Chemical gas-phase reactions for a-Si:H and μc-Si:H deposition;Thin Solid Films;1997-01

5. IMPROVEMENTS IN CONTROL AND UNDERSTANDING OF RADIO FREQUENCY SILANE DISCHARGES;High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes);1997

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