Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al2O3 with SiNx capping

Author:

Madani Keeya,Rohatgi Ajeet,Min Kwan Hong,Song Hee-eun,Huang Ying-Yuan,Upadhyaya Ajay D.,Upadhyaya Vijaykumar,Rounsaville Brian,Ok Young-Woo

Funder

Office of Energy Efficiency and Renewable Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference34 articles.

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2. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry;Lee;Sci. World J.,2013

3. Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen;Cartier;Appl. Phys. Lett.,1993

4. Field-effect passivation of the SiO2Si interface;Glunz;J. Appl. Phys.,1999

5. Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition;Dingemans;Phys. Status Solidi Rapid Res. Lett.,2010

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