Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction-Reference-Cited by-同舟云学术

Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

Published:2011-12 Issue:5 Volume:32 Page:330-333
ISSN:0141-9382
Container-title:Displays
language:en
Short-container-title:Displays

Author:

Liu Yi-Jung,Guo Der-Feng,Chu Kuei-Yi,Cheng Shiou-Ying,Liou Jian-Kai,Chen Li-Yang,Tsai Tsung-Han,Huang Chien-Chang,Chen Tai-You,Hsu Chi-Shiang,Tsai Tsung-Yuan,Liu Wen-Chau

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Human-Computer Interaction

Reference19 articles.

1. High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice

2. On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure

3. Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates

4. Light Emitting Diode with Charge Asymmetric Resonance Tunneling

5. Improvement in the Light Output Power of GaN-Based Light-Emitting Diodes by Natural-Cluster Silicon Dioxide Nanoparticles as the Current-Blocking Layer

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1. Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V;Materials Science in Semiconductor Processing;2015-04

2. Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering;Materials Science and Engineering: B;2015-03

3. Enhanced Electrostatic Discharge Reliability in GaN-Based Light-Emitting Diodes by the Electrode Engineering;Journal of Display Technology;2014-10

4. Material and technology developments of the totally sputtering-made p/n GaN diodes for cost-effective power electronics;Journal of Materials Science: Materials in Electronics;2014-02-26

5. Reducing the Current Crowding Effect on Nitride-Based Light-Emitting Diodes Using Modulated P-Extension Electrode Thickness;Japanese Journal of Applied Physics;2013-01-01