Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates-Reference-Cited by-同舟云学术

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Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates

Published:2010-01-26 Issue:3 Volume:18 Page:2729
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Liu Yi-Jung,Tsai Tsung-Yuan,Yen Chih-Hung,Chen Li-Yang,Tsai Tsung-Han,Huang Chien-Chang,Chen Tai-You,Hsu Chi-Hsiang,Liu Wen-Chau

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference24 articles.

1. Measurement of Junction Temperature in a Nitride Light-Emitting Diode

2. Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

3. Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

4. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

5. Sapphire substrate misorientation effects on GaN nucleation layer properties

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1. High Efficiency Flat-Type GaN-Based Light-Emitting Diodes with Multiple Local Breakdown Conductive Channels;Materials;2024-06-03

2. Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance–Voltage Measurement;Nano Letters;2021-04-07

3. High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel;Scientific Reports;2019-09-20

4. Breakdown-induced conductive channel for III-nitride light-emitting devices;Scientific Reports;2018-11-08

5. Defect reduction in GaN on dome-shaped patterned-sapphire substrates;Optical Materials;2018-02

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