Breakdown-induced conductive channel for III-nitride light-emitting devices
Author:
Funder
Samsung
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-34869-8.pdf
Reference41 articles.
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3. Waltereit, P. et al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865–868 (2000).
4. Tamboli, A. C. et al. Room-temperature continuous-wave lasing in GaN/InGaN microdisks. Nature Photon. 1, 61–64 (2007).
5. Taniyasu, Y., Kasu, M. & Makimoto, T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature 441, 325–328 (2006).
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