Electrical properties of ultra-thin oxynitrided layer using N2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass-Reference-Cited by-同舟云学术

Electrical properties of ultra-thin oxynitrided layer using N2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

Published:2007-06 Issue:16 Volume:515 Page:6615-6618
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jung Sungwook,Hwang Sunghyun,Kim Kyunghae,Dhungel S.K.,Chung Ho-Kyoon,Choi Byoung-Deog,Lee Ki-Yong,Yi J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Excimer-laser-annealed poly-Si thin-film transistors

2. Excimer laser crystallization and doping of silicon films on plastic substrates

3. Low temperature poly-Si TFT-LCD by excimer laser anneal

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