Mobility improvement of LTPS thin film transistor using stacked capping layer-Reference-Cited by-同舟云学术

Mobility improvement of LTPS thin film transistor using stacked capping layer

Published:2021-07 Issue: Volume:247 Page:111591
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kim Taeyong,Shin Donggi,Park Jinsu,Pham Duy Phong,Yi Junsin

Funder

Samsung

Ministry of Trade, Industry and Energy

Korea Institute of Energy Technology Evaluation and Planning

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Stable p-channel polysilicon thin film transistors fabricated by laser doping technique;Di Gaspare,2005

2. Role of SiOxNy surface passivation layer on stability improvement and kink effect reduction of ELA poly silicon thin film transistors;Trinh;Microelectron. Eng.,2016

3. Performance improvement of poly-Si tunnel thin-film transistor by NH3 plasma treatment;Ma;Thin Solid Films,2016

4. Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-κ HfO2 LTPS-TFTs;Chang;Solid State Electron.,2015

5. The fabrication and characterization of EEPROM arrays on glass using a lowtemperature polysi tft process;Young;IEEE Trans. Electron Dev.,1996

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The fabrication and characterization of direct conversion flat panel X-ray imager with TlBr film;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-07

2. A Comparative Study of InSnZnO Transparent Thin-Film Transistors With AZO and GZO Electrodes;IEEE Transactions on Electron Devices;2024-06

3. The Characteristics and Reliability With Channel Length Dependent on the Deposited Sequence of SiO₂ and Si₃N₄ as PV in LTPS TFTs;IEEE Transactions on Device and Materials Reliability;2024-06

4. Electrostatic Damage Influenced by Bottom Gate-Like Effects in Flexible Organic Light-Emitting Diodes;IEEE Electron Device Letters;2023-10