Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents-Reference-Cited by-同舟云学术

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Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents

Published:2016-05-01 Issue:5 Volume:16 Page:4984-4988
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kim Jiwoong,Jang Kyungsoo,Phu Nguyen Thi Cam,Trinh Thanh Thuy,Raja Jayapal,Kim Taeyong,Cho Jaehyun,Kim Sangho,Park Jinjoo,Jung Junhee,Lee Youn-Jung,Yi Junsin

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap study of quantum dot-sized SiGe alloy nanocrystals prepared in a nonthermal capacitively-coupled plasma by ambient scanning tunneling spectroscopy;Physica B: Condensed Matter;2024-02

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