Study on phase change properties of binary GaSb doped Sb–Se film-Reference-Cited by-同舟云学术

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Study on phase change properties of binary GaSb doped Sb–Se film

Published:2015-08 Issue: Volume:589 Page:215-220
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lu Yegang,Song Sannian,Shen Xiang,Song Zhitang,Wang Guoxiang,Dai Shixun

Funder

National Natural Science Foundation of China

Ningbo Municipal Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

K. C. Wong Magna Fund in Ningbo University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Phase change memory;Wong;Proc. IEEE,2010

2. Low-power switching of phase-change materials with carbon nanotube electrodes;Xiong;Science,2011

3. Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory;Hong;Nanotechnology,2010

4. Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials;Jiao;Appl. Phys. A Mater. Sci. Process.,2009

5. Nanosecond in situ transmission electron microscope studies of the reversible Ge2Sb2Te5 crystalline ⇔ amorphous phase transformation;Santala;J. Appl. Phys.,2012

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