Investigation of Cu-Sn-Sb Thin Film for Ultra-Speed and Phase High-Reliability Change Memory Applications

Abstract

SnSb (SS), a vital phase-change thin film, has attracted attention due to its excellent phase-change properties, but the poor amorphous stability and crystalline speed of SS greatly limit its application in rapid phase-transition memories. Here, we propose a copper (Cu)-doped SS phase change films to achieve ultra-speed and high-reliability of SS. Resistance-temperature tests show Cu-Sn-Sb possesses ultra-low crystalline and amorphous resistivity, higher phase transition speed, and lower activation energy. X-ray diffraction measurements illustrate the introduction of Cu ions hinders the growth of grains and reduce grains size. Atomic force microscopy characterizes the surface morphology of as-deposited and annealed Cu-Sn-Sb films, and difference of root-mean-square roughness before and after annealing promote Cu-Sn-Sb film is more reliable to touch electrodes. In addition, the ultra-low resistivity and fast transition speed effectively reduce thermal loss in SET and RESET process. The results reveal that Cu-Sn-Sb is a promising material for ultra-rapid phase change and high-reliability storage applications.