Scalable Wordline Shielding Scheme using Dummy Cell beyond 40 nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell-Reference-Cited by-同舟云学术

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Scalable Wordline Shielding Scheme using Dummy Cell beyond 40 nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

Published:2007-04-24 Issue:4B Volume:46 Page:2188-2192
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Ki-Tae,Lee SeungChul,Sel Jong-Sun,Choi Jungdal,Kim Kinam

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference1 articles.

1. A new recombination model for device simulation including tunneling

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2. Edge Word-Line Reliability Problem in 3-D NAND Flash Memory: Observations, Analysis, and Solutions;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-06

3. Investigation of Vth Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory;IEEE Transactions on Electron Devices;2021-05

4. Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location;Electronics;2020-02-05

5. Exploiting Process Similarity of 3D Flash Memory for High Performance SSDs;Proceedings of the 52nd Annual IEEE/ACM International Symposium on Microarchitecture;2019-10-12

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