Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector-Reference-Cited by-同舟云学术

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Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector

Published:2007-03 Issue:10 Volume:515 Page:4459-4461
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Huang Chun-Yuan,Ou Tzu-Min,Chou Shu-Ting,Tsai Cheng-Shuan,Wu Meng-Chyi,Lin Shih-Yen,Chi Jim-Yong,Hsu Bang-Yu,Chi C.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices

2. A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector

3. Room temperature far infrared (8/spl sim/10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity

4. Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors

5. High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si delta doping inside InAs/GaAs quantum dots with different doping densities;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-07

2. Activation energy and carrier dynamics of CdTe/ZnTe quantum dots on GaAs and Si substrates;Thin Solid Films;2012-06

3. Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction;Journal of Applied Physics;2010-04

4. Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption;Thin Solid Films;2009-05

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