Room temperature far infrared (8/spl sim/10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity-Reference-Cited by-同舟云学术

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Room temperature far infrared (8/spl sim/10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity

Published:2000-07 Issue:7 Volume:21 Page:329-331
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jong-Wook Kim ,Jae-Eung Oh ,Seong-Chul Hong ,Chung-Hoon Park ,Tae-Kyung Yoo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/18399/00847370.pdf?arnumber=847370

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum dot infrared photodetectors;Reference Module in Materials Science and Materials Engineering;2023

2. The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure;Optical Materials;2021-04

3. Quantum Dot Lasers and Amplifiers on Silicon: Recent Advances and Future Developments;IEEE Nanotechnology Magazine;2021-04

4. Self-Assembled Quantum Dot Photodetector: A Pathbreaker in the Field of Optoelectronics;Quantum Dot Photodetectors;2021

5. Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots;Semiconductor Science and Technology;2020-04-07

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