Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3371356
Reference32 articles.
1. Two-dimensional electron gas of very high mobility in planar doped heterostructures
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3. Enhanced electron density in two Si δ-doped Al0.33Ga0.67As/GaAs heterojunctions
4. Microwave-modulated photoluminescence of a two-dimensional electron gas
5. Multidimensional quantum well laser and temperature dependence of its threshold current
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1. Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas;Semiconductors;2019-04
2. Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP);Infrared Physics & Technology;2015-05
3. Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate;Journal of Luminescence;2012-02
4. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure;Journal of Applied Physics;2011-03
5. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors;Nanoscale Research Letters;2011-02-25
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