Two-dimensional electron gas of very high mobility in planar doped heterostructures-Reference-Cited by-同舟云学术

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Two-dimensional electron gas of very high mobility in planar doped heterostructures

Published:1987 Issue:12 Volume:48 Page:2049-2052
ISSN:0302-0738
Container-title:Journal de Physique
language:
Short-container-title:J. Phys. France

Author:

Etienne B.,Paris E.

Publisher

EDP Sciences

Link

http://jphys.journaldephysique.org/10.1051/jphys:0198700480120204900/pdf

Reference10 articles.

1. Two-Dimensional Magnetotransport in the Extreme Quantum Limit

2. Two‐dimensional electron gas structures with mobilities in excess of 3×106cm2 V−1 s−1

3. GaAs structures with electron mobility of 5×106cm2/V s

4. Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures

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1. Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas;Quantum Frontiers;2024-07-26

2. Understanding limits to mobility in ultrahigh-mobility GaAs two-dimensional electron systems: 100 million cm2/Vs and beyond;Physical Review B;2022-08-17

3. MBE growth of high-mobility 2DEG;Molecular Beam Epitaxy;2013

4. Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction;Journal of Applied Physics;2010-04

5. Unreconstructed As atoms mixed with(3×2)cells and(6×6)supercells in low As pressure epitaxy on GaAs(001);Physical Review B;2005-12-15

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