Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3555100
Reference30 articles.
1. Room temperature memory operation of a single InAs quantum dot layer in a GaAs∕AlGaAs heterostructure
2. Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy
3. Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1−xAs/GaAs modulation-doped heterostructures
4. Electron transport through a single InAs quantum dot
5. Charging dynamics of InAs self-assembled quantum dots
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1. Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping;Nanomaterials;2023-03-01
2. Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions;ECS Journal of Solid State Science and Technology;2022-09-01
3. Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas;Semiconductors;2019-04
4. Capping vertically aligned InGaAs/GaAs(Sb) quantum dots with a AlGaAsSb spacer layer in intermediate-band solar cell devices;Progress in Photovoltaics: Research and Applications;2016-09-12
5. Emission-wavelength tuning of InAs quantum dots grown on nitrogen-δ-doped GaAs(001);Journal of Applied Physics;2016-05-21
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