Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy-Reference-Cited by-同舟云学术

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Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Published:2007-01 Issue:7 Volume:253 Page:3503-3507
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim J.H.,Park Y.J.,Park Y.M.,Song J.D.,Lee J.I.,Kim T.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

1. Quantum Semiconductor Structures;Weisbuch,1991

2. Quantum Dot Heterostructures;Bimberg,1999

3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas;Semiconductors;2019-04

2. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells;Thin Solid Films;2014-07

3. III-V Semiconductor Films;Atomic Layer Deposition;2013-05-24

4. Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots;Applied Physics Letters;2011-10-03

5. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure;Journal of Applied Physics;2011-03

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