Top-gate microcrystalline silicon TFTs processed at low temperature (<200 °C)-Reference-Cited by-同舟云学术

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Top-gate microcrystalline silicon TFTs processed at low temperature (<200 °C)

Published:2005-09 Issue:1-2 Volume:487 Page:227-231
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Saboundji A.,Coulon N.,Gorin A.,Lhermite H.,Mohammed-Brahim T.,Fonrodona M.,Bertomeu J.,Andreu J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Optimisation of doped microcrystalline silicon films deposited at very low temperatures by hot-wire CVD

2. Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

3. Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film

4. Evolution of nanocrystalline silicon thin film transistor channel layers

5. Simulation of the Backward Current in Polycrystalline Silicon Thin-Film Transistors

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3. Optimization of CNT and TFT Parameters for Maximum Transconductance and Safe Temperature Operation of Carbon Nanotube Thin-Film Transistors (CNT-TFTs) Employed in Flat Panel Displays;Transactions on Electrical and Electronic Materials;2020-07-05

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