Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

Published:2004-12 Issue: Volume:469-470 Page:178-183
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cheng Y.L.,Wang Y.L.,Lan J.K.,Chen H.C.,Lin J.H.,Wu Y.L.,Liu P.T.,Wu Y.C.,Feng M.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Characterization of Carbon-Doped SiO[sub 2] Low k Thin Films: Preparation by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane

2. Plasma-enhanced chemical vapor deposition of low-kdielectric films using methylsilane, dimethylsilane, and trimethylsilane precursors

3. Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy

4. Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition

5. Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane

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