Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy

Author:

Suzuki Ryoichi,Ohdaira Toshiyuki,Shioya Yoshimi,Ishimaru Tomomi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of vacancies in wafer-bonding interface via positron annihilation lifetime spectroscopy;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. Improvement of Ohmic contacts on Ga2O3through use of ITO-interlayers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11

3. Short and medium range order in two-component silica glasses by positron annihilation spectroscopy;Journal of Applied Physics;2014-05-28

4. Positron Annihilation Lifetime Technique as a Sensitive Nanoporosimetry for Membranes;MEMBRANE;2013

5. Porosity and crystallization of water ice films studied by positron and positronium annihilation;Physical Review B;2011-08-29

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