Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition

Published:2002-10-15 Issue:8 Volume:92 Page:4605-4611
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ligatchev V.,Wong T. K. S.,Liu B.,Rusli

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1507811

Reference27 articles.

1. Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials

2. Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

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