Electrical properties of quaternary HfAlTiO thin films grown by atomic layer deposition-Reference-Cited by-同舟云学术

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Electrical properties of quaternary HfAlTiO thin films grown by atomic layer deposition

Published:2012-05 Issue:14 Volume:520 Page:4547-4550
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Alekhin A.P.,Chouprik A.A.,Grigal I.P.,Gudkova S.A.,Lebedinskii Yu.Yu.,Markeev A.M.,Zaitsev S.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)

2. Interfaces and defects of high-K oxides on silicon

3. Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

4. High-κ gate dielectrics: Current status and materials properties considerations

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4. A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates;RSC Advances;2020

5. Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review;Chemistry of Materials;2018-12-10

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