Characteristics of Ru etching using ICP and helicon O2/Cl2 plasmas
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. High temperature platinum etching using Ti mask layer
2. Ultrathin Ta2 O 5 Film Capacitor with Ru Bottom Electrode
3. Control of Etch Slope during Etching of Pt inAr/Cl2/O2Plasmas
4. Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas
5. High-Temperature Etching of PZT/Pt/TiN Structure by High-Density ECR Plasma
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1. Desorption model of volatile Ru species induced by partial chlorination on Ru(0001) under an O2/Cl2-based plasma process;Journal of Vacuum Science & Technology B;2024-07-01
2. Roughness-generation mechanism of Ru etching using Cl2/O2-based plasma for advanced interconnect;Journal of Vacuum Science & Technology B;2024-07-01
3. Understanding 3D anisotropic reactive ion etching of oxide-metal stacks;Journal of Vacuum Science & Technology B;2023-11-15
4. Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective;Micro and Nano Engineering;2023-09
5. Activation mechanism of ruthenium etching by Cl-based radicals in O2/Cl2 plasma;Japanese Journal of Applied Physics;2023-05-25
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