Control of Etch Slope during Etching of Pt inAr/Cl2/O2Plasmas-Reference-Cited by-同舟云学术

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Control of Etch Slope during Etching of Pt inAr/Cl2/O2Plasmas

Published:1996-04-30 Issue:Part 1, No. 4B Volume:35 Page:2501-2504
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoo Won Jong,Hahm Jin Hwan,Kim Hyoun Woo,Jung Chan Ouk,Koh Young Bum,Lee Moon Yong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 68 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dry etching strategy of spin-transfer-torque magnetic random access memory: A review;Journal of Vacuum Science & Technology B;2020-09

2. Simulation of an Ar/O2/Cl2magnetized direct current discharge;Journal of Physics D: Applied Physics;2016-07-25

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4. Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma;Advanced Materials Research;2013-07

5. Asymmetric electrical properties in Pt/Ba0.5Sr0.5Ti0.99Co0.01O3/Nb-doped SrTiO3 capacitors;Physica B: Condensed Matter;2011-09

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